Transport through crossed nanotubes

被引：33

作者：

Fuhrer, MS ^{[1
]}

Lim, AKL ^{[1
]}

Shih, L ^{[1
]}

Varadarajan, U ^{[1
]}

Zettl, A ^{[1
]}

McEuen, PL ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Dept Phys, Berkeley, CA 94720 USA

来源：

PHYSICA E | 2000年 / 6卷 / 1-4期

关键词：

one-dimensional; electron transport; carbon nanotube;

D O I：

10.1016/S1386-9477(99)00228-3

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In order to study the electronic properties of single-walled carbon nanotube junctions we have fabricated several devices consisting of two crossed nanotubes with electrical leads attached to each end of each nanotube. We correlate the properties of the junctions with the properties of the individual nanotubes: metal-metal, metal-semiconductor, and semiconductor-semiconductor junctions are all formed. We find that metal-metal SWNT junctions exhibit surprisingly high conductances of 0.1-0.2 e(2)/h. Semiconductor-semiconductor junctions also show significant linear response conductance. Metal-semiconductor junctions behave as D-type Schottky diodes. hll the junction types can reliably I,ass currents of hundreds of nanoamps. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：868 / 871

页数：4