Surface/interface issues in THz electronics

被引:4
作者
Hartnagel, HL [1 ]
Ichizli, V [1 ]
Rodríguez-Gironés, M [1 ]
机构
[1] Tech Univ Darmstadt, Inst Hochfrequenztech, D-64283 Darmstadt, Germany
关键词
Terahertz (THz); surface; interface; semiconductor; Schottky; heterostructure;
D O I
10.1016/S0169-4332(01)00914-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Basic THz elements are produced by standard semiconductor science and technology. Therefore, three main material systems are used. These are first of all semiconductors, for active and passive layer formation; metals, for interconnect and contact formation; and insulators, for passivation and isolation purposes. Additionally, these materials are structured in order to produce a device with desired dimensions and characteristics. Semiconductor surfaces, in particular suffer considerable chances during technological processing. Thus, surface and interface issues are essential here to be considered. Semiconductor-dielectric, semiconductor-metal, and semiconductor-semiconductor interfaces as well as surface effects for the case of GaAs are discussed in detail from the point of view of Schottky diodes and heterostructure-based devices for THz applications. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:428 / 436
页数:9
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