Lateral hopping conductivity and large negative magnetoresistance in InAs/AlGaAs self-organized quantum dots

被引：9

作者：

Kochman, B ^{[1
]}

Ghosh, S ^{[1
]}

Singh, J ^{[1
]}

Bhattacharya, P ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2002年 / 35卷 / 15期

关键词：

D O I：

10.1088/0022-3727/35/15/101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report experimental studies on lateral transport in self-organized quantum dots. We find that below 100 K, conduction occurs through interdot hopping and that experimental results are described quite well by a variable-range hopping model. In the hopping regime, the in-plane conductance varies as G = G(0) exp[(-T-0/ T)(1/3)], and T-0 is found to be 7100-9400 K. We have also observed a large negative magnetoresistance in this structure.

引用

页码：L65 / L68

页数：4

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