Room-temperature observation of the Coulomb blockade effects in Al two-terminal diodes fabricated using a focused ion-beam nanoparticle process

被引:9
作者
Kim, TW [1 ]
Kang, SO [1 ]
Choo, DC [1 ]
Shim, JH [1 ]
机构
[1] Kwangwoon Univ, Dept Phys, Seoul 139701, South Korea
关键词
D O I
10.1063/1.125930
中图分类号
O59 [应用物理学];
学科分类号
摘要
Al two-terminal diodes were fabricated on a basis of an artificial pattern formation method using focused ion-beam (FIB) techniques. The results of current-voltage and conductance-voltage measurements at room temperature showed the Coulomb staircase and the Coulomb blockade effects, respectively. The Coulomb blockade effects originate from the many nanoparticles created by the defects due to the Ga+ ion beam. These results indicate that Al two-terminal diodes fabricated by using the FIB system hold promise for potential applications in single-electron transistors operating at room temperature. (C) 2000 American Institute of Physics. [S0003-6951(00)03708-6].
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收藏
页码:1036 / 1038
页数:3
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