METAL-SEMICONDUCTOR-METAL DEMULTIPLEXING WAVE-GUIDE PHOTODETECTORS IN INGAAS/GAAS QUANTUM-WELL STRUCTURES BY SELECTIVE BANDGAP TUNING

被引：19

作者：

CHOUDHURY, ANMM

MELMAN, P

SILLETTI, A

KOTELES, ES

FOLEY, B

ELMAN, B

机构：

[1] GTE Laboratories Incorporated, Waltham, MA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 09期

关键词：

D O I：

10.1109/68.84504

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two-wavelength demultiplexing metal-semiconductor-metal (MSM) waveguide photodetector has been fabricated using impurity-free vacancy diffusion and partial intermixing of an InGaAs/GaAs strained layer quantum well structure. The importance of growth and process parameters, such as aluminum composition in the cladding layer, the oxygen plasma treatment of the sample during processing on the related device performance, are discussed. This photodetector is a potential candidate for monolithic integration with other optoelectronic devices.

引用

页码：817 / 820

页数：4

共 7 条

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