EFFECT OF HEAT-TREATMENT ON INGAAS/GAAS QUANTUM-WELLS

被引：28

作者：

ELMAN, B

KOTELES, ES

MELMAN, P

JAGANNATH, C

ARMIENTO, CA

ROTHMAN, M

机构：

[1] GTE Laboratories Incorporated, Waltham, MA 02254

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 03期

关键词：

D O I：

10.1063/1.346680

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the effect of furnace annealing on 60-Å-wide In xGa1-xAs/GaAs single quantum wells (SQWs) in the range of indium composition 0.1≤x≤0.5. Excitonic energy shifts of up to 120 meV were observed after annealing of the samples at 825°C for 30 min. The fact that these energy shifts were strongly dependent of the indium composition in the well material was consistent with enhancement on the indium diffusion out of the wells associated with the presence of dislocations. The most dramatic changes, as a result of annealing, manifested by strain recovery were observed from the SQW with x=0.3 which as-grown had a low dislocation density (quantum well thickness slightly exceeding the critical layer thickness for formation of dislocations).

引用

页码：1351 / 1353

页数：3

共 12 条

[1] BVERGER PR, 1989, 1LTH INT S GAAS RELA, V106, P183
[2] INSITU MEASUREMENTS OF CRITICAL LAYER THICKNESS AND OPTICAL STUDIES OF INGAAS QUANTUM WELLS GROWN ON GAAS SUBSTRATES
ELMAN, B
KOTELES, ES
MELMAN, P
JAGANNATH, C
LEE, J
DUGGER, D
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (16) : 1659 - 1661
[3] ELMAN B, 1989, UNPUB MATER RES SOC
[4] SUBMILLIAMPERE THRESHOLD CURRENT PSEUDOMORPHIC INGAAS/ALGAAS BURIED-HETEROSTRUCTURE QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
ENG, LE
CHEN, TR
SANDERS, S
ZHUANG, YH
ZHAO, B
YARIV, A
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (14) : 1378 - 1379
[5] 1.3 MU-M MONOLITHICALLY INTEGRATED WAVE-GUIDE-INTERDIGITATED METAL-SEMICONDUCTOR-METAL PHOTODETECTOR ON A GAAS SUBSTRATE
JAGANNATH, C
SILLETTI, A
CHOUDHURY, ANMM
ELMAN, B
MELMAN, P
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (19) : 1892 - 1894
[6] KOTELES ES, UNPUB MATER RES SOC
[7] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2
[8] INGAAS/GAAS STRAINED QUANTUM WELLS WITH A 1.3-MU-M BAND EDGE AT ROOM-TEMPERATURE
MELMAN, P
ELMAN, B
JAGANNATH, C
KOTELES, ES
SILLETTI, A
DUGGER, D
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (14) : 1436 - 1438
[9] INXGA1-XAS GAAS PSEUDOMORPHIC QUANTUM-WELLS - GROWTH AND THERMAL-STABILITY
NICKEL, H
LOSCH, R
SCHLAPP, W
LEIER, H
FORCHEL, A
[J]. SURFACE SCIENCE, 1990, 228 (1-3) : 340 - 343
[10] STABILITY OF STRAINED QUANTUM-WELL FIELD-EFFECT TRANSISTOR STRUCTURES
PEERCY, PS
DODSON, BW
TSAO, JY
JONES, ED
MYERS, DR
ZIPPERIAN, TE
DAWSON, LR
BIEFELD, RM
KLEM, JF
HILLS, CR
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (12) : 621 - 623

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