INGAAS/GAAS STRAINED QUANTUM WELLS WITH A 1.3-MU-M BAND EDGE AT ROOM-TEMPERATURE

被引：15

作者：

MELMAN, P

ELMAN, B

JAGANNATH, C

KOTELES, ES

SILLETTI, A

DUGGER, D

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 14期

关键词：

D O I：

10.1063/1.101579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1436 / 1438

页数：3

共 11 条

[1]

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[3]

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[4]

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[9] HIGH-SPEED 1.3-MU-M GAINAS DETECTORS FABRICATED ON GAAS SUBSTRATES [J].

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[10]

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