Anisotropic spin transport in (110) GaAs quantum wells

被引：83

作者：

Couto, O. D. D., Jr.

Iikawa, F.

Rudolph, J.

Hey, R.

Santos, P. V.

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[2] Univ Estadual Campinas, IFGW, BR-13083970 Campinas, SP, Brazil

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.98.036603

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Mobile piezoelectric potentials are used to coherently transport electron spins in GaAs (110) quantum wells (QW) over distances exceeding 60 mu m. We demonstrate that the dynamics of mobile spins under external magnetic fields depends on the direction of motion in the QW plane. This transport anisotropy is an intrinsic property of moving spins associated with the bulk inversion asymmetry of the underlying GaAs lattice.

引用

页数：4

共 24 条

[1] Spin relaxation in n-modulation doped GaAs/AlGaAs (110) quantum wells [J].