Chemically grafted field effect transistors for the detection of potassium ions

被引：9

作者：

Elbhiri, Z

Chovelon, JM

Jaffrezic-Renault, N

Chevalier, Y

机构：

[1] Ecole Cent Lyon, IFoS PCI, F-69131 Ecully, France

[2] CNRS, LMOPS, F-69390 Vernaison, France

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1999年 / 58卷 / 1-3期

关键词：

field effect transistors; grafting; crown ether;

D O I：

10.1016/S0925-4005(99)00109-4

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

K+-ISFETs are prepared by grafting, on the silica gate insulator surface, silylated crown-ether molecules which were synthesized for the first time. Three grafting reactions were tested. The responses of the grafted ISFETs are sub-nernstian. They are analyzed through the modified site-binding model and the density of grafted sites was found to be equal to 6 X 10(12) cm(-2) with the chloro-silylated molecule and 13 x 10(12) cm(-2) with the dimethylamino-silylated molecule, the complexation constant of K+ ions being found to be equal to 10(2.1). (C) 1999 Elsevier Science S.A. All rights reserved.

引用

收藏

页码：491 / 496

页数：6

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