Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ SixNy masking

被引：179

作者：

Dadgar, A ^{[1
]}

Poschenrieder, M ^{[1
]}

Bläsing, J ^{[1
]}

Fehse, K ^{[1
]}

Diez, A ^{[1
]}

Krost, A ^{[1
]}

机构：

[1] Univ Magdeburg, Inst Expt Phys, Fak Nat Wissensch, D-39016 Magdeburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 20期

关键词：

D O I：

10.1063/1.1479455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thick, entirely crack-free GaN-based light-emitting diode structures on 2 in. Si(111) substrates were grown by metalorganic chemical-vapor deposition. The similar to2.8-mum-thick diode structure was grown using a low-temperature AlN:Si seed layer and two low-temperature AlN:Si interlayers for stress reduction. In current-voltage measurements, low turn-on voltages and a series resistance of 55 Omega were observed for a vertically contacted diode. By in situ insertion of a SixNy mask, the luminescence intensity is significantly enhanced. A light output power of 152 muW at a current of 20 mA and a wavelength of 455 nm is achieved. (C) 2002 American Institute of Physics.

引用

页码：3670 / 3672

页数：3

共 18 条

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