Electrical resistivity of fully-relaxed grain boundaries in nanocrystalline Cu

被引：76

作者：

Qian, LH

Lu, QH

Kong, WJ

Lu, K

机构：

[1] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Lab Extreme Condit Phys, Beijing 100080, Peoples R China

来源：

SCRIPTA MATERIALIA | 2004年 / 50卷 / 11期

基金：

中国国家自然科学基金;

关键词：

electrical resistivity; nanocrystalline Cu; relaxation of grain boundary and magnetron sputtering;

D O I：

10.1016/j.scriptamat.2004.02.026

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Electrical resistivity of grain boundaries (GBs) was determined in nanocrystalline (nc) Cu specimens prepared by magnetosputtering and subsequent annealing. Extrapolating the microstrain dependence of GB resistivity, we derived electrical resistivity of GBs in a fully-relaxed state in Cu, being 2.04 x 10(-16) Omegam(2). (C) 2004 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：1407 / 1411

页数：5

共 20 条

[1] RESISTIVITY DUE TO GRAIN BOUNDARIES IN PURE COPPER [J].