A small area in-situ MEMS test structure to measure fracture strength by electrostatic probing

被引:15
作者
de Boer, MP [1 ]
Jensen, BD [1 ]
Bitsie, F [1 ]
机构
[1] Sandia Natl Labs, Dept 1725, Albuquerque, NM 87185 USA
来源
MATERIALS AND DEVICE CHARACTERIZATION IN MICROMACHINING II | 1999年 / 3875卷
关键词
D O I
10.1117/12.360459
中图分类号
TU [建筑科学];
学科分类号
0813 ;
摘要
We have designed, fabricated, tested and modeled a first generation small area test structure for MEMS fracture studies by electrostatic rather than mechanical probing. Because of its small area, this device has potential applications as a lot monitor of strength or fatigue of the MEMS structural material. By matching deflection versus applied voltage data to a 3-D model of the test structure, we develop high confidence that the local stresses achieved in the gage section are greater than 1 GPa. Brittle failure of the polycrystalline silicon was observed.
引用
收藏
页码:97 / 103
页数:7
相关论文
共 27 条
[1]  
BALLARINI R, 1997, J MAT RES
[2]  
BIEBL M, 1995, P INT C SOL STAT SEN, P72
[3]   Determination of maximum allowable strain for polysilicon micro-devices [J].
Bromley, SC ;
Howell, LL ;
Jensen, BD .
ENGINEERING FAILURE ANALYSIS, 1999, 6 (01) :27-41
[4]   SLOW CRACK-GROWTH IN SINGLE-CRYSTAL SILICON [J].
CONNALLY, JA ;
BROWN, SB .
SCIENCE, 1992, 256 (5063) :1537-1539
[5]   Adhesion of polysilicon microbeams in controlled humidity ambients [J].
de Boer, MP ;
Clews, PJ ;
Smith, BK ;
Michalske, TA .
MICROELECTROMECHANICAL STRUCTURES FOR MATERIALS RESEARCH, 1998, 518 :131-136
[6]  
deBoer MP, 1997, TRANSDUCERS 97 - 1997 INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS AND ACTUATORS, DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2, P229, DOI 10.1109/SENSOR.1997.613625
[7]  
DEBOER MP, 1999, UNPUB LANGMUIR
[8]  
DEBOER MP, 1998, SPIE SANT CLAR CA, P241
[9]  
DEBOER MP, 1999, J APPL PHYS, V86
[10]   MICROMECHANICAL FRACTURE STRENGTH OF SILICON [J].
ERICSON, F ;
SCHWEITZ, JA .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (11) :5840-5844