High mobility n-type thin-film transistors based on N,N′-ditridecyl perylene diimide with thermal treatments

被引：251

作者：

Tatemichi, Shuhei ^{[1
]}

Ichikawa, Musubu ^{[1
]}

Koyama, Toshiki ^{[1
]}

Taniguchi, Yoshio ^{[1
]}

机构：

[1] Shinshu Univ, Dept Funct Polymer Sci, Fac Text Sci & Technol, Ueda, Nagano 3868567, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 11期

关键词：

D O I：

10.1063/1.2349290

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors demonstrated that N,N-'-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) thin-film transistors (TFTs) exhibited high field-effect electron mobility of 2.1 cm(2)/V s by just annealing at an adequate temperature (140 degrees C) after the TFT fabrications. While PTCDI-C13 formed c-axis oriented thin films, the thermal treatments improved crystallinity of the thin films as revealed by x-ray diffraction. The thermal treatment also affected thin-film morphologies; the morphologies changed from oval ball-like grains to flat and large tilelike grains, which had molecular height steps and whose size reached several micrometers. (c) 2006 American Institute of Physics.

引用

页数：3

共 19 条

[1] n-Type organic field-effect transistors with very high electron mobility based on thiazole oligomers with trifluoromethylphenyl groups [J].

Ando, S ;

Murakami, R ;

Nishida, J ;

Tada, H ;

Inoue, Y ;

Tokito, S ;

Yamashita, Y .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (43) :14996-14997

[2] New air-stable n-channel organic thin film transistors [J].

Bao, ZA ;

Lovinger, AJ ;

Brown, J .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1998, 120 (01) :207-208

[3] Organic thin film transistors based on N-alkyl perylene diimides:: Charge transport kinetics as a function of gate voltage and temperature [J].

Chesterfield, RJ ;

McKeen, JC ;

Newman, CR ;

Ewbank, PC ;

da Silva, DA ;

Brédas, JL ;

Miller, LL ;

Mann, KR ;

Frisbie, CD .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (50) :19281-19292

[4]

Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO

[5]

2-9

[6] Building blocks for n-type organic electronics: Regiochemically modulated inversion of majority carrier sign in perfluoroarene-modified polythiophene semiconductors [J].

Facchetti, A ;

Yoon, MH ;

Stern, CL ;

Katz, HE ;

Marks, TJ .

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2003, 42 (33) :3900-3903

[7] The path to ubiquitous and low-cost organic electronic appliances on plastic [J].

Forrest, SR .

NATURE, 2004, 428 (6986) :911-918

[8] High mobility C60 organic field-effect transistors [J].

Haddock, NJ ;

Domercq, B ;

Kippelen, B .

ELECTRONICS LETTERS, 2005, 41 (07) :444-446

[9] High-mobility organic thin-film transistors based on α,α′-didecyloligothiophenes [J].

Halik, M ;

Klauk, H ;

Zschieschang, U ;

Schmid, G ;

Radlik, W ;

Ponomarenko, S ;

Kirchmeyer, S ;

Weber, W .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (05) :2977-2981

[10] Evidence for n-type conduction in a perylene tetracarboxylic diimide derivative [J].

Horowitz, G ;

Kouki, F ;

Spearman, P ;

Fichou, D ;

Nogues, C ;

Pan, X ;

Garnier, F .

ADVANCED MATERIALS, 1996, 8 (03) :242-&

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