Advanced characterization of high-k materials:: A nuclear approach

被引:6
作者
Brijs, B
Huyghebaert, C
Nauwelaerts, S
Caymax, M
Vandervorst, W
Nakajima, K
Kimura, K
Bergmaier, A
Döllinger, G
Lennard, WN
Terwagne, G
Vantomme, A
机构
[1] IMEC, B-3001 Louvain, Belgium
[2] Katholieke Univ Leuven, INSYS, B-3001 Louvain, Belgium
[3] Kyoto Univ, Sakyo Ku, Kyoto 6068501, Japan
[4] Tech Univ Munich, Phys Dept E12, D-85747 Garching, Germany
[5] Univ Western Ontario, Dept Phys & Astron, Interface Sci W, London, ON N6A 3K7, Canada
[6] Katholieke Univ Leuven, IKS, B-3001 Louvain, Belgium
关键词
Rutherford backscattering; elastic recoil detection; nuclear reaction analysis; high-k; thin film;
D O I
10.1016/S0168-583X(02)00468-8
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The determination of the composition of thin (1.5-3 nm) high-k layers ZrO2/Al2O3 becomes more and more important in microelectronics. High resolution Rutherford backscattering spectrometry and high resolution elastic recoil detection can achieve depth resolutions down to 1 nm while Rutherford backscattering spectrometry and nuclear reaction analysis are perfectly suited to quantify the zirconium, the oxygen and the aluminum content. The goal of this paper is to investigate the use of nuclear techniques for the characterization of thin high-k materials. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:505 / 509
页数:5
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