Air-bridge-structured silicon nanowire and anomalous conductivity

被引：32

作者：

Fujii, H

Kanemaru, S

Matsukawa, T

Itoh, J

机构：

[1] Japan Sci & Technol Corp, CREST, Kawaguchi, Saitama 3320012, Japan

[2] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

[3] Univ Tsukuba, Tsukuba, Ibaraki 3058573, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 25期

关键词：

D O I：

10.1063/1.125514

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An air-bridge-structured silicon nanowire was made by micromachining a silicon-on-insulator (SOI) substrate and electrically characterized. The nanowire was isolated from the substrate by an air gap and typically 20-100 nm in diameter and 300-600 nm in length. Current-voltage characteristics of these wires were anomalous electric conductivity such as negative resistance and hysteresis at room temperature. Charge accumulation into surface states is considered a dominant characteristic. (C) 1999 American Institute of Physics. [S0003-6951(99)03751-1].

引用

页码：3986 / 3988

页数：3

共 4 条

[1] Fabrication of a nanometer-scale Si-wire by micromachining of a silicon-on-insulator substrate [J].