Numerical analysis of the transient response in amorphous silicon

被引：6

作者：

Popovic, P ^{[1
]}

Bassanese, E ^{[1
]}

Smole, F ^{[1
]}

Furlan, J ^{[1
]}

Grebner, S ^{[1
]}

Schwarz, R ^{[1
]}

机构：

[1] TECH UNIV MUNICH,DEPT PHYS E16,D-8046 GARCHING,GERMANY

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 09期

关键词：

D O I：

10.1063/1.366184

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using our program, TRansient Amorphous DEvice Simulator (TRADES), for the simulation of transient phenomena in amorphous silicon devices, the transient response after turning the light off is numerically calculated. Parameters for the numerical analysis are obtained by fitting the two families of the measured steady-state characteristics: light-intensity and temperature dependence of the secondary photocurrent. Using these parameters, both temperature and light-intensity dependence of the transients are calculated. It is shown that the transient is faster at higher temperatures and at higher illumination levels. Results are compared with measured transients at different temperatures. (C) 1997 American Institute of Physics. [S0021-8979(97)03620-7].

引用

页码：4504 / 4507

页数：4

共 9 条

[1] PHOTOCONDUCTIVITY RESPONSE-TIME IN AMORPHOUS-SEMICONDUCTORS [J].

ADRIAENSSENS, GJ ;

BARANOVSKII, SD ;

FUHS, W ;

JANSEN, J ;

OKTU, O .

PHYSICAL REVIEW B, 1995, 51 (15) :9661-9667

[2] ANALYSIS OF THE DISPERSIVE CHARGE TRANSPORT IN VITREOUS 0.55 AS2S3-0.45 SB2S3 [J].

ARKHIPOV, VI ;

IOVU, MS ;

RUDENKO, AI ;

SHUTOV, SD .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 54 (01) :67-77

[3] TRANSIENT SIMULATION OF SILICON DEVICES AND CIRCUITS [J].

BANK, RE ;

COUGHRAN, WM ;

FICHTNER, W ;

GROSSE, EH ;

ROSE, DJ ;

SMITH, RK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (10) :1992-2007

[4] CHARGE-CARRIER TRANSIENT-RESPONSE FROM STEADY-STATE IN A-SI [J].

BASSANESE, E ;

FURLAN, J .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1995, 56 (09) :1201-1209

[5] THE RELATIONSHIP BETWEEN TRANSIENT AND STEADY-STATE PHOTOCONDUCTIVITY IN AMORPHOUS-SEMICONDUCTORS [J].

KASTNER, MA ;

MONROE, D .

SOLAR ENERGY MATERIALS, 1982, 8 (1-3) :41-52

[6] TRANSIENT PHOTOCONDUCTIVITY FROM THE STEADY-STATE IN UNDOPED AMORPHOUS-SILICON [J].

MENDOZA, D .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (10) :1879-1883

[7] PHOTOCURRENT TRANSIENT SPECTROSCOPY - MEASUREMENT OF THE DENSITY OF LOCALIZED STATES IN ALPHA-AS2SE3 [J].

ORENSTEIN, J ;

KASTNER, M .

PHYSICAL REVIEW LETTERS, 1981, 46 (21) :1421-1424

[8] INTERNAL AND EXTERNAL CHARACTERISTICS IN TRANSIENT FORWARD BIAS SIMULATIONS OF A-SI-H DEVICES [J].

POPOVIC, P ;

BASSANESE, E ;

FURLAN, J ;

SMOLE, F ;

SKUBIC, I .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 191 (1-2) :184-192

[9] A PHYSICAL INTERPRETATION OF DISPERSIVE TRANSPORT IN DISORDERED SEMICONDUCTORS [J].

TIEDJE, T ;

ROSE, A .

SOLID STATE COMMUNICATIONS, 1981, 37 (01) :49-52

← 1 →