TRANSIENT SIMULATION OF SILICON DEVICES AND CIRCUITS

被引：73

作者：

BANK, RE ^{[1
]}

COUGHRAN, WM ^{[1
]}

FICHTNER, W ^{[1
]}

GROSSE, EH ^{[1
]}

ROSE, DJ ^{[1
]}

SMITH, RK ^{[1
]}

机构：

[1] AT&T BELL LABS,TECH STAFF,MURRAY HILL,NJ 07974

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 10期

关键词：

D O I：

10.1109/T-ED.1985.22232

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1992 / 2007

页数：16

共 48 条

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[3]

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[4]

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[6] TRANSPORT EQUATIONS FOR ELECTRONS IN 2- VALLEY SEMICONDUCTORS [J].

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[7] NEW EFFICIENT ALGORITHM FOR SOLVING DIFFERENTIAL-ALGEBRAIC SYSTEMS USING IMPLICIT BACKWARD DIFFERENTIATION FORMULAS [J].

BRAYTON, RK ;

HACHTEL, GD ;

GUSTAVSON, FG .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (01) :98-+

[8]

BURNS JR, 1967, RCA REV, V28, P385

[9]

BURNS TR, 1969, RCA REV, V30, P15

[10]

Chua L.O., 1975, SER PRENTICE HALL SE

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