TRANSIENT SIMULATION OF SILICON DEVICES AND CIRCUITS

被引：73

作者：

BANK, RE ^{[1
]}

COUGHRAN, WM ^{[1
]}

FICHTNER, W ^{[1
]}

GROSSE, EH ^{[1
]}

ROSE, DJ ^{[1
]}

SMITH, RK ^{[1
]}

机构：

[1] AT&T BELL LABS,TECH STAFF,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1109/T-ED.1985.22232

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1992 / 2007

页数：16

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