TRANSIENT RESPONSE OF INSULATED-GATE FIELD-EFFECT TRANSISTORS

被引：11

作者：

OREILLY, TJ

机构：

来源：

SOLID-STATE ELECTRONICS | 1965年 / 8卷 / 12期

关键词：

D O I：

10.1016/0038-1101(65)90159-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：947 / +

页数：1

共 11 条

[1]

BORKAN H, 1963, RCA REV, V24, P153

[2] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].

HOFSTEIN, SR ;

HEIMAN, FP .

PROCEEDINGS OF THE IEEE, 1963, 51 (09) :1190-&

[3]

IHANTOLA HJK, 1963, ASD61133 STANF U TEC

[4] THEORY OF TRANSIENT SPACE-CHARGE-LIMITED CURRENTS IN SOLIDS IN PRESENCE OF TRAPPING [J].

MANY, A ;

RAKAVY, G .

PHYSICAL REVIEW, 1962, 126 (06) :1980-&

[5] EFFECT OF SURFACE TRAPS ON CHARACTERISTICS OF INSULATED-GATE FIELD-EFFECT TRANSISTORS [J].

OREILLY, TJ .

SOLID-STATE ELECTRONICS, 1965, 8 (03) :267-&

[6] CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].

SAH, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) :324-+

[7]

WANLASS FM, 1963, P I SOLIDSTATE CIRCU, P32

[8] INTEGRATED CIRCUITS INCORPORATING THIN-FILM ACTIVE + PASSIVE ELEMENTS [J].

WEIMER, PK ;

SHALLCROSS, FV ;

SADASIV, G ;

BORKAN, H ;

MERAYHOR.L .

PROCEEDINGS OF THE IEEE, 1964, 52 (12) :1479-&

[9] TFT - NEW THIN-FILM TRANSISTOR [J].

WEIMER, PK .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (06) :1462-&

[10]

WEIMER PK, 1962, AD269929

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