Strong configuration mixing due to dielectric confinement in semiconductor nanorods

被引：26

作者：

Climente, J. I. ^{[1
]}

Royo, M. ^{[1
]}

Movilla, J. L. ^{[1
]}

Planelles, J. ^{[1
]}

机构：

[1] Univ Jaume 1, Dept Quim Fis & Analit, E-12080 Castellon de La Plana, Spain

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 16期

关键词：

cadmium compounds; excited states; excitons; ground states; II-VI semiconductors; mixing; nanostructured materials; wave functions; CDSE QUANTUM RODS; PSEUDOPOTENTIAL CALCULATION; DEPENDENT PROPERTIES; ELECTRONIC STATES; SIZE DEPENDENCE; NANOCRYSTALS; EXCITONS; SHAPE; DOTS; SILICON;

D O I：

10.1103/PhysRevB.79.161301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The interaction between electron-electron and electron-hole pairs in semiconductor nanorods embedded in dielectric media is investigated using a configuration-interaction method. Contrary to spherical quantum dots of similar volume, the dielectric confinement is shown to bring nanorods into a regime of strong configuration mixing. The wave functions are particularly sensitive to such mixing, which leads to qualitative changes in the electronic and optical properties of the rods.

引用

页数：4

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