Metallic low-temperature resistivity in a 2D electron system over an extended temperature range

被引:62
作者
Kravchenko, SV [1 ]
Klapwijk, TM
机构
[1] Northeastern Univ, Dept Phys, Boston, MA 02115 USA
[2] Delft Univ Technol, Dept Appl Phys, NL-2628 CJ Delft, Netherlands
关键词
Carrier concentration - Electric conductivity - Fermi level - Low temperature effects - Metal insulator transition - MOSFET devices - Silicon;
D O I
10.1103/PhysRevLett.84.2909
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report measurements of the zero-field resistivity in a dilute 2D electron system in silicon at temperatures down to 35 mK. This extends the previously explored range of temperatures in this system by almost an order of magnitude. On the metallic side, the resistivity near the metal-insulator transition continues to decrease with decreasing temperature and shows no low-temperature upturn. At the critical electron density, the resistivity is found to be temperature independent in the entire temperature range from 35 mK to 1 K.
引用
收藏
页码:2909 / 2912
页数:4
相关论文
共 13 条
[1]  
Abrahams E, 1999, ANN PHYS-BERLIN, V8, P539, DOI 10.1002/(SICI)1521-3889(199911)8:7/9<539::AID-ANDP539>3.0.CO
[2]  
2-F
[3]   SCALING THEORY OF LOCALIZATION - ABSENCE OF QUANTUM DIFFUSION IN 2 DIMENSIONS [J].
ABRAHAMS, E ;
ANDERSON, PW ;
LICCIARDELLO, DC ;
RAMAKRISHNAN, TV .
PHYSICAL REVIEW LETTERS, 1979, 42 (10) :673-676
[4]   Theory of metal-insulator transitions in gated semiconductors [J].
Altshuler, BL ;
Maslov, DL .
PHYSICAL REVIEW LETTERS, 1999, 82 (01) :145-148
[5]  
ALTSHULER BL, CONDMAT9909353
[6]   Charged impurity-scattering-limited low-temperature resistivity of low-density silicon inversion layers [J].
Das Sarma, S ;
Hwang, EH .
PHYSICAL REVIEW LETTERS, 1999, 83 (01) :164-167
[7]   Effect of local magnetic moments on the metallic behavior in two dimensions [J].
Feng, XG ;
Popovic, D ;
Washburn, S .
PHYSICAL REVIEW LETTERS, 1999, 83 (02) :368-371
[8]  
HANEIN Y, 1998, PHYS REV B, V58, P7520
[9]   ANOMALOUS CYCLOTRON-RESONANCE LINE SPLITTING OF 2-DIMENSIONAL HOLES IN (311)A ALXGA1-XAS/GAAS HETEROJUNCTIONS [J].
HIRAKAWA, K ;
ZHAO, Y ;
SANTOS, MB ;
SHAYEGAN, M ;
TSUI, DC .
PHYSICAL REVIEW B, 1993, 47 (07) :4076-4079
[10]   A few electrons per ion scenario for the B=0 metal-insulator transition in two dimensions [J].
Klapwijk, TM ;
Das Sarma, S .
SOLID STATE COMMUNICATIONS, 1999, 110 (10) :581-586