Displacive radiation effects in the monazite- and zircon-structure orthophosphates

被引:173
作者
Meldrum, A
Boatner, LA
Ewing, RC
机构
[1] UNIV NEW MEXICO, DEPT EARTH & PLANETARY SCI, ALBUQUERQUE, NM 87131 USA
[2] OAK RIDGE NATL LAB, DIV SOLID STATE, OAK RIDGE, TN 37831 USA
来源
PHYSICAL REVIEW B | 1997年 / 56卷 / 21期
关键词
D O I
10.1103/PhysRevB.56.13805
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Monazite-structure orthophosphates, including LaPO4, PrpO(4), NdPO4, SmPO4, EuPo4, GdPO4, and natural monazite, and their zircon-structure analogs, including ScPO4, YPO4, TbPO4, TmPO4, YbPO4, and LuPO4, were irradiated by 800 keV Kr2+ ions in the temperature range of 20 to 600 K. The critical amorphization dose was determined in situ as a function of temperature using selected-area electron diffraction. Amorphization doses were in the range of 10(14) to 10(16) ions/cm(2), depending on the temperature. Materials with the zircon structure were amorphized at higher temperatures than those with the monazite structure. The critical amorphization temperature ranged from 350 to 485 K for orthophosphates with the monazite structure. The critical amorphization temperature ranged from 350 to 485 K for orthophosphates with the monazite structure and from 480 to 580 K for those with the zircon structure. However, natural zircon (ZrSiO4) can be amorphized at over 1000 K. Within each structure type, the critical temperature of amorphization increased with the atomic number of the lanthanide cation. Structural topology models are consistent with the observed differences between the two structure types, but not predict the relative amorphization doses for different compositions. The ratio of electronic-to-nuclear stopping correlates well with the observed of susceptibility to amorphization within each structure type, consistent with previous results that electronic-energy losses enhance defect recombination in the orthophosphates.
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页码:13805 / 13814
页数:10
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