Ultrafast monolithically integrated InP-based photoreceiver: OEIC-design, fabrication, and system application

被引：9

作者：

Bach, HG ^{[1
]}

Umbach, A ^{[1
]}

vanWaasen, S ^{[1
]}

Bertenburg, RM ^{[1
]}

Unterborsch, G ^{[1
]}

机构：

[1] GERHARD MERCATOR UNIV DUISBURG,DEPT SOLID STATE ELECT,D-47057 DUISBURG,GERMANY

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1996年 / 2卷 / 02期

关键词：

D O I：

10.1109/2944.577404

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An InP-based photoreceiver OEIC for lambda = 1.55 mu m with a bandwidth of 27 GHz is reported, The receiver design, fabrication and characterization is presented, The device consists of an optical waveguide-fed pin-photodiode and a coplanar traveling-wave amplifier being composed of four GaInAs-AlInAs-InP-HEMT's. The photodiode exhibits an external quantum efficiency of 30% and a 3-dB power bandwidth of 35 GHz, HEMT's with 0.7-mu m gate length, integrated on semi-insulating optical waveguide layers show cutoff frequencies f(T)/f(max) of 37/100 GHz at zero gate bias, Traveling-wave amplifiers with 0.5-mu m gate HEMT's have 28-GHz bandwidth, The receiver OEIC is packaged into a module with fiber pigtail and operates successfully within an SDH based 20-Gb/s transmission system. An overall system sensitivity of -30.5 dBm was achieved at a BER = 10(-9) after signal transmission over 198-km dispersion shifted fiber.

引用

页码：418 / 423

页数：6