Relaxation of hot excitons in inhomogeneously broadened CdxZn1-xSe/ZnSe nanostructures

被引：10

作者：

Bacher, G

Spiegel, R

Kummell, T

Breitwieser, O

Forchel, A

Jobst, B

Hommel, D

Landwehr, G

机构：

[1] Technische Physik, Universität Würzburg, D-97074 Würzburg, Am Hubland

[2] Experimentelle Physik III, Universität Würzburg, D-97074 Würzburg, Am Hubland

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.56.6868

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dimensionality dependence of hot exciton relaxation was studied by means of photoluminescence (PL) spectroscopy comparing CdxZn1-xSe/ZnSe quantum wells and quantum dots. In both systems, an efficient population of radiative excitonic ground states via longitudinal-optical (LO) phonon scattering is observed for an excess energy of the exciting laser corresponding to an integer number of LO-phonon energies. Thus, only selected areas of the inhomogeneously broadened systems contribute to the PL spectrum immediately after the exciting laser pulse. This results in a drastical reduction of the PL linewidth. In quantum wells, the redistribution of excitons occurs due to acoustic phonon assisted migration within the CdxZn1-xSe/ZnSe layer. In contrast, this process is found to be substantially suppressed in quantum dots due to the three-dimensional exciton confinement.

引用

页码：6868 / 6870

页数：3

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