Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy

被引：121

作者：

Smorchkova, IP ^{[1
]}

Haus, E

Heying, B

Kozodoy, P

Fini, P

Ibbetson, JP

Keller, S

DenBaars, SP

Speck, JS

Mishra, UK

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 06期

关键词：

D O I：

10.1063/1.125872

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN:Mg layers grown by plasma-assisted molecular-beam epitaxy at 650 degrees C are investigated. Secondary-ion-mass-spectroscopy measurements reveal uniform Mg doping profiles with very sharp boundaries. The amount of incorporated Mg atoms changes approximately linearly with incident Mg flux. Hall measurements on p-type GaN:Mg layers show that about 1%-2% of all Mg atoms are ionized at room temperature. The hole mobility depends strongly on the hole concentration, varying from mu(p)=24 cm(2)/V s for p=1.8x10(17) cm(-3) to mu(p)=7.5 cm(2)/V s for p=1.4x10(18) cm(-3). GaN p-n diodes with molecular-beam-epitaxy-grown p regions are analyzed using current-voltage measurements. (C) 2000 American Institute of Physics. [S0003-6951(00)03806-7].

引用

页码：718 / 720

页数：3

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