Reexamination of some spintronic field-effect device concepts

被引:60
作者
Bandyopadhyay, S
Cahay, M
机构
[1] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA
[2] Virginia Commonwealth Univ, Dept Phys, Richmond, VA 23284 USA
[3] Univ Cincinnati, Dept Elect & Comp Engn & Comp Sci, Cincinnati, OH 45221 USA
关键词
D O I
10.1063/1.1784042
中图分类号
O59 [应用物理学];
学科分类号
摘要
Current interest in spintronics is largely motivated by a belief that spin-based devices (e.g., spin field-effect transistors) will be faster and consume less power than their electronic counterparts. Here we show that this is generally untrue. Unless materials with extremely strong spin-orbit interaction can be developed, the spintronic devices will not measure up to their electronic cousins. We also show that some recently proposed modifications of the original spin field-effect transistor concept of Datta and Das [Appl. Phys. Lett. 56, 665 (1990)] actually lead to worse performance than the original construct. (C) 2004 American Institute of Physics.
引用
收藏
页码:1433 / 1435
页数:3
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