Effect of interfaces in Monte Carlo computer simulations of ferroelectric materials

被引:13
作者
Bolten, D [1 ]
Böttger, U [1 ]
Waser, R [1 ]
机构
[1] Univ Aachen, Inst Werkstoffe Elektrotech, D-52056 Aachen, Germany
关键词
D O I
10.1063/1.1687455
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this article, Monte Carlo simulation methods were used to investigate the influence of interface layers between the ferroelectric core material and the electrodes on the hysteresis loop in ferroelectric thin films. The hysteresis loops were calculated using an existing Monte Carlo model. For certain interface configurations, the simulations resulted in asymmetric hysteresis loops, similar to imprinted loops; due to asymmetric nucleation kinetics. Although the results might not offer-a new explanation for imprint in ferroelectric thin films, they provide insight into the often observed phenomenon of initially imprinted hysteresis loops of as-prepared thin-film samples. (C) 2004, American Institute of Physics.
引用
收藏
页码:2379 / 2381
页数:3
相关论文
共 9 条
[1]   DIELECTRIC-CONSTANT AND LEAKAGE CURRENT OF EPITAXIALLY GROWN AND POLYCRYSTALLINE SRTIO3 THIN-FILMS [J].
ABE, K ;
KOMATSU, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9B) :4186-4189
[2]   Influence of defects on the properties of a 2D ferroelectric:: A Monte-Carlo simulation study [J].
Bolten, D ;
Böttger, U ;
Waser, R .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (11B) :7202-7210
[3]   INFLUENCE OF STRESSES ON THE PROPERTIES OF FERROELECTRIC BATIO3 THIN-FILMS [J].
DESU, SB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (10) :2981-2987
[4]   The interface screening model as origin of imprint in PbZrxTi1-xO3 thin films.: I.: Dopant, illumination, and bias dependence [J].
Grossmann, M ;
Lohse, O ;
Bolten, D ;
Boettger, U ;
Schneller, T ;
Waser, R .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (05) :2680-2687
[5]   The interface screening model as origin of imprint in PbZrxTi1-xO3 thin films.: II.: Numerical simulation and verification [J].
Grossmann, M ;
Lohse, O ;
Bolten, D ;
Boettger, U ;
Waser, R .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (05) :2688-2696
[6]   Monte Carlo simulation of ferroelectric domain structure and applied field response in two dimensions [J].
Potter, BG ;
Tikare, V ;
Tuttle, BA .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :4415-4424
[7]   Injection-controlled size effect on switching of ferroelectric thin films [J].
Tagantsev, AK ;
Stolichnov, IA .
APPLIED PHYSICS LETTERS, 1999, 74 (09) :1326-1328
[8]   Size effects in polarization switching in ferroelectric thin films [J].
Tagantsev, AK .
INTEGRATED FERROELECTRICS, 1997, 16 (1-4) :237-244
[9]   Intrinsic dead layer effect and the performance of ferroelectric thin film capacitors [J].
Zhou, C ;
Newns, DM .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (06) :3081-3088