Intrinsic dead layer effect and the performance of ferroelectric thin film capacitors

被引:296
作者
Zhou, C [1 ]
Newns, DM [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1063/1.366147
中图分类号
O59 [应用物理学];
学科分类号
摘要
We apply the Thomas theory of ferroelectricity to bulk and thin film perovskite ferroelectrics in the paraelectric regime above the transition temperature. From available data on bulk SrTiO3 we are able to fully determine the parameters in the Thomas theory for this material, with overall reasonable results, supporting its validity. In a new application of the Thomas theory to the surface of a thin ferroelectric film in the linear response regime, it is found that there is anticipated to be an intrinsic ''dead layer effect'' on the surface of a dielectric film which significantly reduces the effective dielectric constant observed in capacitor applications. Two predictions of the theory are verified from recent experimental data. An experiment is suggest to distinguish between linear and nonlinear surface effects. (C) 1997 American Institute of Physics.
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页码:3081 / 3088
页数:8
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