Control of crystalline structure and electrical properties of TaSiN thin film formed by reactive RF-sputtering

被引：17

作者：

Oizumi, M ^{[1
]}

Aoki, K ^{[1
]}

Hashimoto, S ^{[1
]}

Nemoto, S ^{[1
]}

Fukuda, Y ^{[1
]}

机构：

[1] Texas Instruments Tsukuba Res & Dev Ctr Ltd, Tsukuba, Ibaraki 3050841, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 3A期

关键词：

barrier metal; TaSiN; Cu interconnects; ferroelectric memory; reactive sputtering; amorphous;

D O I：

10.1143/JJAP.39.1291

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The crystalline structure, thermal stability, and electrical properties of TaN and TaSiN thin films formed by reactive RF-sputtering with a broad range of N and Si composition ratios were investigated. TaSiN with a Si/(Si + Ta) ratio less than 25% were crystalline, whereas that with a ratio more than 25% was amorphous, regardless of the Nz partial pressure. The amorphous films exhibited excellent thermal stability with no crystallization up to 900 degrees C. Crystalline films consisted of columnar grains with sizes ranging from 20-30 nm. Electrical resistivity showed a strong dependence on the Si and N composition ratios. However, amorphous films deposited at low N-2 partial pressure exhibited constant resistivity, regardless of the Si/Ta ratio. These results clarify that the crystalline structure and electrical resistivity of TaSiN films can be controlled by varying the Si and N composition ratios.

引用

页码：1291 / 1294

页数：4

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