Modulation of flat-band potential and increase in photovoltage for n-Si electrodes by formation of halogen atom terminated surface bonds

被引：20

作者：

Fujitani, M

Hinogami, R

Jia, JG

Ishida, M

Morisawa, K

Yae, S

Nakato, Y

机构：

[1] OSAKA UNIV, GRAD SCH ENGN SCI, DEPT CHEM, TOYONAKA, OSAKA 560, JAPAN

[2] OSAKA UNIV, CTR PHOTOENERGET ORGAN MAT, TOYONAKA, OSAKA 560, JAPAN

来源：

CHEMISTRY LETTERS | 1997年 / 10期

关键词：

D O I：

10.1246/cl.1997.1041

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The flat-band potential (U-FB) of n-Si electrodes in concentrated hydrogen halide (HX) solutions, as determined from Morr-Schottky plots and the onset potential of photocurrent, shifts largely toward the negative with the decreasing electronegativity of halogen atoms. XPS studies have shown the presence of halogen atoms on the Si electrodes which were beforehand immersed in the HX solutions. The shift in U-FB can be explained as due to changes in surface potential by formation of Si-halogen surface termination bonds.

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页码：1041 / 1042

页数：2

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