Universal excess noise in resonant tunneling via strongly localized states

被引：42

作者：

Nazarov, YV

Struben, JJR

机构：

[1] Faculteit der Technische Natuurkunde, Technische Universiteit Delft

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.53.15466

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We show that in disordered resonant tunneling conductors the excess current noise is suppressed by a factor of 3/4 in comparison with its Poisson value provided the electrons tunnel via strongly localized states. Thus we reveal a class of systems exhibiting universality of its shot-noise properties. We discuss recent experiments.

引用

页码：15466 / 15468

页数：3

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