COULOMB CORRELATIONS IN HOPPING THROUGH A THIN-LAYER

被引：16

作者：

BAHLOULI, H

MATVEEV, KA

EPHRON, D

BEASLEY, MR

机构：

[1] STANFORD UNIV,DEPT APPL PHYS,STANFORD,CA 94305

[2] UNIV MINNESOTA,INST THEORET PHYS,MINNEAPOLIS,MN 55455

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.49.14496

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A detailed microscopic investigation of the effect of Coulomb correlations on the inelastic contribution to tunneling via localized states through thin amorphous barriers is presented. The theoretical calculation together with experimental results show that Coulomb correlations play an important role and also imply that localized states whose single-particle energies lie well below the Fermi level participate in transport due to the Coulomb correlations.

引用

页码：14496 / 14503

页数：8

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