QUANTUM TRANSISTORS AND CIRCUITS BREAK THROUGH THE BARRIERS

被引：3

作者：

CAPASSO, F

SEN, S

LUNARDI, LM

CHO, AY

机构：

[1] UNIV COLL SCI CALCUTTA,DEPT ELECTR SCI,CALCUTTA 700019,W BENGAL,INDIA

[2] AT&T BELL LABS,TECH STAFF,HOLMDEL,NJ 07733

[3] AT&T BELL LABS,MAT PROC RES LAB,MURRAY HILL,NJ 07974

来源：

IEEE CIRCUITS AND DEVICES MAGAZINE | 1991年 / 7卷 / 03期

关键词：

D O I：

10.1109/101.79792

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：18 / 25

页数：8

共 12 条

[1] PSEUDOMORPHIC IN0.53GA0.47AS/ALAS/INAS RESONANT TUNNELING DIODES WITH PEAK-TO-VALLEY CURRENT RATIOS OF 30 AT ROOM-TEMPERATURE [J].

BROEKAERT, TPE ;

LEE, W ;

FONSTAD, CG .

APPLIED PHYSICS LETTERS, 1988, 53 (16) :1545-1547

[2]

BROWN ER, 1990, 48TH DEV RES C SANT

[3] RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE [J].

CAPASSO, F ;

KIEHL, RA .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1366-1368

[4] QUANTUM FUNCTIONAL DEVICES - RESONANT-TUNNELING TRANSISTORS, CIRCUITS WITH REDUCED COMPLEXITY, AND MULTIPLE-VALUED LOGIC [J].

CAPASSO, F ;

SEN, S ;

BELTRAM, F ;

LUNARDI, LM ;

VENGURLEKAR, AS ;

SMITH, PR ;

SHAH, NJ ;

MALIK, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) :2065-2082

[5] QUANTUM-WELL RESONANT TUNNELING BIPOLAR-TRANSISTOR OPERATING AT ROOM-TEMPERATURE [J].

CAPASSO, F ;

SEN, S ;

GOSSARD, AC ;

HUTCHINSON, AL ;

ENGLISH, JH .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (10) :573-576

[6] BAND-GAP ENGINEERING - FROM PHYSICS AND MATERIALS TO NEW SEMICONDUCTOR-DEVICES [J].

CAPASSO, F .

SCIENCE, 1987, 235 (4785) :172-176

[7]

CAPASSO F, 1990, PHYSICS QUANTUM ELEC

[8] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[9]

Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[10]

MORTON JA, 1965, IEEE SPECTRUM, V62

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