Atomic layer deposition of ZrO2/La2O3 high-k dielectrics on germanium reaching 0.5 nm equivalent oxide thickness

被引：36

作者：

Abermann, S. ^{[1
]}

Bethge, O. ^{[1
]}

Henkel, C. ^{[1
]}

Bertagnolli, E. ^{[1
]}

机构：

[1] Vienna Univ Technol, Inst Solid State Elect, A-1040 Vienna, Austria

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 26期

基金：

奥地利科学基金会;

关键词：

atomic layer deposition; current density; elemental semiconductors; germanium; high-k dielectric thin films; lanthanum compounds; MOS capacitors; permittivity; zirconium compounds; GROWTH; FILMS;

D O I：

10.1063/1.3173199

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate ultrathin ZrO2/La2O3 high-k dielectric stacks on germanium grown by atomic layer deposition. La2O3 is deposited from tris(N,N-'-diisopropylformamidinate)-lanthanum and oxygen. Interfacial layer-free oxide stacks with a relative dielectric constant of 21 and equivalent oxide thickness values as low as 0.5 nm are obtained. Metal oxide semiconductor capacitors with platinum as the gate electrode exhibit well-behaved capacitance-voltage characteristics, gate leakage current densities in the range of 0.01-1 A/cm(2), and interface trap densities in the range of similar to 3x10(12) eV(-1) cm(-2).

引用

页数：3

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