Self-organization kinetics in finite precipitate ensembles during coarsening

被引:27
作者
Borodin, VA [1 ]
Heinig, KH [1 ]
Reiss, S [1 ]
机构
[1] KURCHATOV INST,RUSSIAN RES CTR,MOSCOW 123182,RUSSIA
来源
PHYSICAL REVIEW B | 1997年 / 56卷 / 09期
关键词
D O I
10.1103/PhysRevB.56.5332
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A rate equation approach is applied for the description of the self-organization (layering) phenomenon predicted in recent computer experiments. This layering was observed in finite precipitate systems during annealing and is caused by Ostwald ripening. The onset of the layer formation is shown to be triggered by the inhomogeneity of the impurity concentration profile near the boundary of a precipitate system and not by the spatially uniform ''nonlocal fluctuation instability'' of precipitate parameters. The change of the spatial profile of precipitate size starts from the boundary of the-system and occurs within a reaction shell having a thickness of the order of the diffusional screening length. During annealing this reaction shell shifts progressively into the system, leaving behind layers of precipitates. The layering is shown to occur only in sufficiently large systems with characteristic dimensions of at least several diffusional screening lengths. The reason for the weak sensitivity of interlayer distance to variations of system parameters is elucidated.
引用
收藏
页码:5332 / 5344
页数:13
相关论文
共 35 条
  • [1] Balescu R., 1975, Equilibrium and Nonequilibrium Statistical Mechanics
  • [2] DIFFUSION LIMITED PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON
    BINNS, MJ
    BROWN, WP
    WILKES, JG
    NEWMAN, RC
    LIVINGSTON, FM
    MESSOLORAS, S
    STEWART, RJ
    [J]. APPLIED PHYSICS LETTERS, 1983, 42 (06) : 525 - 527
  • [3] GENERALIZED RATE THEORY FOR SPATIALLY INHOMOGENEOUS SYSTEMS OF POINT-DEFECT SINKS
    BORODIN, VA
    [J]. PHYSICA A-STATISTICAL MECHANICS AND ITS APPLICATIONS, 1994, 211 (2-3) : 279 - 316
  • [4] DIFFUSION TO A RANDOM ARRAY OF IDENTICAL SPHERICAL SINKS
    BRAILSFORD, AD
    [J]. JOURNAL OF NUCLEAR MATERIALS, 1976, 60 (03) : 257 - 278
  • [5] BUCHAL C, 1994, ANNU REV MATER SCI, V24, P125
  • [6] CANHAM LH, 1990, APPL PHYS LETT, V57, P401
  • [7] FEENEY R, 1983, J CHEM PHYS, V78, P1293, DOI 10.1063/1.444867
  • [8] CONCENTRATION-DEPENDENCE OF RATE OF DIFFUSION-CONTROLLED REACTIONS
    FELDERHOF, BU
    DEUTCH, JM
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1976, 64 (11) : 4551 - 4558
  • [9] PRECIPITATE COARSENING AND CO REDISTRIBUTION AFTER ION-IMPLANTATION IN SILICON
    FICHTNER, PFP
    JAGER, W
    RADERMACHER, K
    MANTL, S
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 632 - 636
  • [10] SILICON-IMPLANTED SIO2 FOR NONVOLATILE MEMORY APPLICATIONS
    HAO, MY
    HWANG, H
    LEE, JC
    [J]. SOLID-STATE ELECTRONICS, 1993, 36 (09) : 1321 - 1324