Heteroepitaxial growth and characteristics of 3C-SiC on large-diameter Si(001) substrates

被引：57

作者：

Nagasawa, H ^{[1
]}

Kawahara, T ^{[1
]}

Yagi, K ^{[1
]}

机构：

[1] Hoya Corp, R&D Ctr, Akishima, Tokyo 1968510, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

3C-SiC; heteroepitaxy; planar defects; twin boundaries; undulation;

D O I：

10.4028/www.scientific.net/MSF.389-393.319

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Large-diameter 3C-SiC was grown epitaxially on a Si (001) substrate which covered with countered slopes oriented in the [110] and [(1) over bar(1) over bar0] directions (undulant-Si). The twinning domain structure of the 3C-SiC is a triangular-shaped plate, with its flat faces (coherent twin boundaries) oriented in the [(1) over bar 11] or [1 (1) over bar1] directions and its edges (incoherent twin boundaries) along the <110> axes. The expanding and vanishing mechanisms of twinning domains are discussed.

引用

页码：319 / 322

页数：4

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