In situ transmission electron microscope studies of the kinetics of abnormal grain growth in electroplated copper films

被引：87

作者：

Hau-Riege, SP ^{[1
]}

Thompson, CV ^{[1
]}

机构：

[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 03期

关键词：

D O I：

10.1063/1.125729

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have performed in situ transmission electron microscopy studies of abnormal grain growth in electroplated copper films at room temperature and 55 degrees C, starting minutes after the plating process by electroplating directly onto electron-transparent membranes. A kinetic analysis indicates that the grains that grow abnormally, reject impurities as they grow, so that the impurities accumulate in (and must diffuse through) the untransformed matrix. This suggests that while impurities impair normal grain growth, impurity rejection contributes to the energetics that drive abnormal grain growth. This result also indicates that removal of impurities from the film can control the kinetics of the transformation to large-grained structures. (C) 2000 American Institute of Physics. [S0003-6951(00)03703-7].

引用

页码：309 / 311

页数：3

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