Modeling the photoluminescence lifetime in realistic quantum wires

被引:10
作者
Feltrin, A [1 ]
Staehli, JL
Deveaud, B
Savona, V
机构
[1] Ecole Polytech Fed Lausanne, Inst Photon & Elect Quant, CH-1015 Lausanne, Switzerland
[2] Ecole Polytech Fed Lausanne, Inst Theorie Phenomenes Phys, CH-1015 Lausanne, Switzerland
来源
PHYSICAL REVIEW B | 2004年 / 69卷 / 23期
关键词
D O I
10.1103/PhysRevB.69.233309
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a theoretical model of the time-resolved excitonic photoluminescence in quantum wires. We study the role of disorder and of the exciton-free-carrier interaction on the temperature dependence of the photoluminescence lifetime. We find that at low temperature the exciton population is not thermalized in disordered quantum wires and that the lifetime is mainly determined by the localization length of the exciton. However, for large localization lengths or high enough temperatures the exciton population thermalizes within its lifetime and the temperature dependence becomes square-root-like. The inclusion of free carriers leads to an increase of the lifetime at high temperatures and to a quasiexponential temperature dependence.
引用
收藏
页码:233309 / 1
页数:4
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