Kinetics of exciton photoluminescence in type-II semiconductor superlattices

被引：15

作者：

Braginsky, LS ^{[1
]}

Zaharov, MY ^{[1
]}

Gilinsky, AM ^{[1
]}

Preobrazhenskii, VV ^{[1
]}

Putyato, MA ^{[1
]}

Zhuravlev, KS ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.63.195305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The exciton decay rate at a rough interface in type-II semiconductor superlattices is investigated. it is shown that the possibility of recombination of the indirect excitons at a plane interface essentially affects the kinetics of the exciton photoluminescence at a rough interface. This is the result of the quantum interference of electrons scattered from the plane interface and at the roughnesses. Expressions that relate the parameters of the luminescence kinetics with the statistical characteristics of the rough interface are obtained. The mean height and length of the roughnesses in GaAs/AlAs superlattices are estimated from the experimental data.

引用

页数：10

共 28 条

[1]

ALEINER IL, 1993, SEMICONDUCTORS+, V27, P330

[2] Determination of the roughness of heteroboundaries from photocurrent spectra of short-period AlAs/GaAs superlattices [J].

Alperovich, VL ;

Moshegov, NT ;

Popov, VV ;

Terekhov, AS ;

Tkachenko, VA ;

Toropov, AI ;

Yaroshevich, AS .

PHYSICS OF THE SOLID STATE, 1997, 39 (11) :1864-1868

[3] CONNECTION OF ENVELOPE FUNCTIONS AT SEMICONDUCTOR HETEROINTERFACES .2. MIXINGS OF GAMMA-VALLEYS AND CHI-VALLEYS IN GAAS/ALXGA1-XAS [J].

ANDO, T ;

AKERA, H .

PHYSICAL REVIEW B, 1989, 40 (17) :11619-11633

[4]

Bass F.G., 1979, WAVE SCATTERING STAT

[5]

BECHSTEDT F, 1988, SEMICONDUCTOR SURFAC

[6] STATISTICAL PROPERTIES OF ECHOES DIFFRACTED FROM ROUGH SURFACES [J].

BERRY, MV .

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1973, 273 (1237) :611-654

[7] Interband light absorption at a rough interface [J].

Braginsky, L .

PHYSICA E, 1999, 5 (03) :142-152

[8] Light absorption at a semiconductor interface [J].

Braginsky, LS .

PHYSICAL REVIEW B, 1998, 57 (12) :R6870-R6873

[9] OPTICAL-PROPERTIES AND BAND-STRUCTURE OF SHORT-PERIOD GAAS/ALAS SUPERLATTICES [J].

FINKMAN, E ;

STURGE, MD ;

MEYNADIER, MH ;

NAHORY, RE ;

TAMARGO, MC ;

HWANG, DM ;

CHANG, CC .

JOURNAL OF LUMINESCENCE, 1987, 39 (02) :57-74

[10] VALLEY MIXING IN GAAS/ALAS MULTILAYER STRUCTURES IN THE EFFECTIVE-MASS METHOD [J].

FU, Y ;

WILLANDER, M ;

IVCHENKO, EL ;

KISELEV, AA .

PHYSICAL REVIEW B, 1993, 47 (20) :13498-13507

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