First-principles prediction of icosahedral quantum dots for tetravalent semiconductors

被引:53
作者
Zhao, YF [1 ]
Kim, YH [1 ]
Du, MH [1 ]
Zhang, SB [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
关键词
D O I
10.1103/PhysRevLett.93.015502
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Despite the scientific importance of semiconductor quantum dots (QDs), little is known about their structure other than the bulk form. Here, we show that one can join segments of tetravalent semiconductors into a seamless icosahedron. Calculations for Si show that pristine icosahedral QDs are more stable than bulklike ones for diameter d<5 nm. Hydrogenated icosahedral quantum dots (IQDs) could also be stable and more atomiclike with larger level spacing and fivefold orbital degeneracy due to the I-h symmetry not possible in the bulk. Experimental feasibility toward synthesizing the IQDs in Si and diamond is also discussed.
引用
收藏
页码:015502 / 1
页数:4
相关论文
共 22 条
[11]   Chemical design of direct-gap light-emitting silicon [J].
Luo, X ;
Zhang, SB ;
Wei, SH .
PHYSICAL REVIEW LETTERS, 2002, 89 (07) :1-076802
[12]   A DENSE NON-CRYSTALLOGRAPHIC PACKING OF EQUAL SPHERES [J].
MACKAY, AL .
ACTA CRYSTALLOGRAPHICA, 1962, 15 (SEP) :916-&
[13]   Spectroscopy and hot electron relaxation dynamics in semiconductor quantum wells and quantum dots [J].
Nozik, AJ .
ANNUAL REVIEW OF PHYSICAL CHEMISTRY, 2001, 52 :193-231
[14]   Coherent spin transfer between molecularly bridged quantum dots [J].
Ouyang, M ;
Awschalom, DD .
SCIENCE, 2003, 301 (5636) :1074-1078
[15]   Hydrogen-induced instability on the flat Si(001) surface via steric repulsion [J].
Reboredo, FA ;
Zhang, SB ;
Zunger, A .
PHYSICAL REVIEW B, 2001, 63 (12)
[16]   CRYSTAL-STRUCTURE AND HABIT OF SILICON AND GERMANIUM PARTICLES GROWN IN ARGON GAS [J].
SAITO, Y .
JOURNAL OF CRYSTAL GROWTH, 1979, 47 (01) :61-72
[17]   High pressure behavior of silicon clathrates:: A new class of low compressibility materials [J].
San-Miguel, A ;
Kéghélian, P ;
Blase, X ;
Mélinon, P ;
Perez, A ;
Itié, JP ;
Polian, A ;
Reny, E ;
Cros, C ;
Pouchard, M .
PHYSICAL REVIEW LETTERS, 1999, 83 (25) :5290-5293
[18]   METALLIC PHASE WITH LONG-RANGE ORIENTATIONAL ORDER AND NO TRANSLATIONAL SYMMETRY [J].
SHECHTMAN, D ;
BLECH, I ;
GRATIAS, D ;
CAHN, JW .
PHYSICAL REVIEW LETTERS, 1984, 53 (20) :1951-1953
[19]   Structural relaxation in Si and Ge nanocrystallites:: Influence on the electronic and optical properties -: art. no. 245304 [J].
Weissker, HC ;
Furthmüller, J ;
Bechstedt, F .
PHYSICAL REVIEW B, 2003, 67 (24)
[20]   What is the ground-state structure of the thinnest Si nanowires? [J].
Zhao, YF ;
Yakobson, BI .
PHYSICAL REVIEW LETTERS, 2003, 91 (03) :035501/1-035501/4