The solubility and defect equilibrium of the n-type dopants nitrogen and phosphorus in 4H-SiC: a theoretical study

被引：4

作者：

Bockstedte, M ^{[1
]}

Mattausch, A ^{[1
]}

Pankratov, O ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Lehrstuhl Theor Festkorperphys, D-91058 Erlangen, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2 | 2004年 / 457-460卷

关键词：

nitrogen-vacancy complex; electrical activation; critical nitrogen concentration;

D O I：

10.4028/www.scientific.net/MSF.457-460.715

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The n-type dopants phosphorus and nitrogen as well as the impurity-related defects are investigated by an ab initio method. The defect equilibrium and solubility are analysed. The electrical activation of nitrogen is found to saturate above a critical nitrogen concentration, due to the enhanced formation of nitrogen-vacancy complexes. The phosphorus activation is not affected by self-compensation or passivation. The calculated phosphorus solubility and implantation experiments suggest that the low value found in PVT-growth is due to the growth kinetics.

引用

页码：715 / 718

页数：4

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