Study of nitrogen incorporation in 6H-SiC single crystals grown by PVT

被引：17

作者：

Schulz, D ^{[1
]}

Irmscher, K ^{[1
]}

Dolle, J ^{[1
]}

Eiserbeck, W ^{[1
]}

Müller, T ^{[1
]}

Rost, HJ ^{[1
]}

Siche, D ^{[1
]}

Wagner, G ^{[1
]}

Wollweber, J ^{[1
]}

机构：

[1] Inst Kristallzuchtung, DE-12489 Berlin, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

6H polytype; nitrogen concentration; seed orientation; sublimation bulk growth;

D O I：

10.4028/www.scientific.net/MSF.338-342.87

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The incorporation of nitrogen during single crystal growth of silicon carbide via the vapour phase has been studied in the concentration range of 3(.)10(17) cm(-3) less than or equal to c(N) less than or equal to 3(.)10(19) cm(-3). The nitrogen concentration was measured by secondary ion mass spectrometry (SIMS) and the net doping concentration by capacitance-voltage measurements (CV). In general with increasing the ratio N-2/(N-2+Ar) the nitrogen concentration in the crystals also increases resulting in a function of the square root of nitrogen partial pressure. Furthermore the influence of the seed orientation on the nitrogen level was investigated.

引用

页码：87 / 90

页数：4

共 6 条

[1] Growth of 6H and 4H silicon carbide single crystals by the modified Lely process utilizing a dual-seed crystal method [J].

Heydemann, VD ;

Schulze, N ;

Barrett, DL ;

Pensl, G .

APPLIED PHYSICS LETTERS, 1996, 69 (24) :3728-3730

[2]

Larkin DJ, 1996, INST PHYS CONF SER, V142, P23

[3]

Lely J.A., 1955, Berichte der Deutschen Keramischen Gesellschaft, V32, P229

[4] Impurity incorporation during sublimation growth of 6H bulk SiC [J].

Schulz, D ;

Wagner, G ;

Dolle, J ;

Irmscher, K ;

Müller, T ;

Rost, HJ ;

Siche, D ;

Wollweber, J .

JOURNAL OF CRYSTAL GROWTH, 1999, 198 :1024-1027

[5] Influence of excess silicon on the surface morphology and defect structure during the initial stages of SiC sublimation growth [J].

Schulz, D ;

Wagner, G ;

Doerschel, J ;

Dolle, J ;

Eiserbeck, W ;

Muller, T ;

Rost, HJ ;

Siche, D ;

Wollweber, J .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 61-2 :86-88

[6] INFLUENCE OF THE SEED FACE POLARITY ON THE SUBLIMATION GROWTH OF ALPHA-SIC [J].

TAKAHASHI, J ;

OHTANI, N ;

KANAYA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (9A) :4694-4698

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