Pore-sealing by etch-byproduct followed by ALD-Ta adhesion layer for Cu/porous low-k interconnects

被引：14

作者：

Furuya, A ^{[1
]}

Soda, E ^{[1
]}

Yoneda, K ^{[1
]}

Yoshie, T ^{[1
]}

Okamura, H ^{[1
]}

Shimada, M ^{[1
]}

Ohtsuka, N ^{[1
]}

Ogawa, S ^{[1
]}

机构：

[1] Semicond Leading Edge Technol Inc, Res Dept 2, Tsukuba, Ibaraki 3058569, Japan

来源：

PROCEEDINGS OF THE IEEE 2004 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2004年

关键词：

D O I：

10.1109/IITC.2004.1345677

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Increase of process steps by pore-sealing and low via yield by low adhesion between Cu and barrier metal are cost issues when atomic layer deposited (ALD) barrier metal process is integrated into Cu/porous low-k interconnects. In order to solve these issues, etch-byproduct in-situ deposited on the sidewall and ALD-Ta are proposed. The etch-byproduct successfully prevented Ta penetration into the porous low-k film without increase process steps. ALD-Ta film of 0.8 nm, deposited by exposures of pentakisdimethylaminotantalium. (PDMAT) and He/H-2 plasma to the substrate in turn, demonstrated strong adhesion layer as same as the conventional PVD barrier. Via yield of single damascene Cu/porous low-k interconnects with the etch-byproduct was improved by substituting ALD-Ta for ALD-TaN.

引用

页码：39 / 41

页数：3

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