Internal stress and elastic modulus measurements on micromachined 3C-SiC thin films

被引：53

作者：

Mehregany, M ^{[1
]}

Tong, LJ ^{[1
]}

Matus, LG ^{[1
]}

Larkin, DJ ^{[1
]}

机构：

[1] NASA,LEWIS RES CTR,CLEVELAND,OH 44135

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 01期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1109/16.554795

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fabrication of epitaxial 3C-SiC microstructures by bulk micromachining of the underlying silicon substrate was investigated. Initial studies of the mechanical properties of epitaxial 3C-SiC films deposited on silicon were carried out on microstructures fabricated by bulk micromachining of the silicon substrate to evaluate the potential of these films for micromechanics. Residual stress and biaxial modulus of 3C-SiC films were measured by load-deflection measurements of suspended diaphragms. The film's residual stress was tensile with an average of 212 MPa, while the in-plane biaxial modulus averaged 441 GPa.

引用

页码：74 / 79

页数：6