Simulation of the growth dynamics of amorphous and microcrystalline silicon

The qualitative description of the major microstructure characteristics of microcrystalline silicon is achieved through a three-dimensional discrete dynamical growth model. The model is based on three fundamental processes that determine surface morphology: (1) random deposition of particles, (2) local relaxation and (3) desorption. In this model, the incoming particle reaching the growing surface takes on a state variable representing a particular way of being incorporated into the material. The state variable is attributed according to a simple selection rule that is characteristic of the model. This model reproduces most of the features of the complex microstructure of microcrystalline silicon: transition from amorphous to crystalline phase, conical shape of the crystalline domains, crystalline fraction evolution with respect to the layer thickness and roughness evolution versus layer thickness. (C) 2004 Elsevier B.V. All rights reserved.