CMOS on FZ-high resistivity substrate for monolithic integration of SiGe-RF-circuitry and readout electronics

被引:17
作者
Beck, D [1 ]
Herrmann, M [1 ]
Kasper, E [1 ]
机构
[1] UNIV STUTTGART, IHT, D-70174 STUTTGART, GERMANY
关键词
D O I
10.1109/16.595936
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The choice of a highly resistive substrate for silicon millimeter-wave integrated circuits (SIMMWIC) imposed by the requirement of low RF-substrate losses requires the adaptation of a CMOS process on float zone silicon (FZ), A comparison of n- and p-channel devices realized on high resistivity substrate (p-type, 5000 Omega.cm) and standard CMOS substrates (CZ, n-type, 46 Omega.cm) is given. Using careful process design, we obtained device characteristics on FZ-substrates that are closely similar to those on standard material, thus allowing direct transfer of existing circuit designs.
引用
收藏
页码:1091 / 1101
页数:11
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