Raman spectra of CuInSe2 thin films prepared by chemical spray pyrolysis

被引：33

作者：

Shirakata, S ^{[1
]}

Kubo, H ^{[1
]}

Hamaguchi, C ^{[1
]}

Isomura, S ^{[1
]}

机构：

[1] OSAKA UNIV, FAC ENGN, SUITA, OSAKA 565, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 10B期

关键词：

CuInSe2 thin film; chemical spray pyrolysis; chalcopyrite semiconductors; Raman spectroscopy;

D O I：

10.1143/JJAP.36.L1394

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Raman spectra have been investigated for CuInSe2 polycrystalline thin films prepared by chemical spray pyrolysis. The A(1) mode Raman peak at 174 cm(-1), the dominant peak in CuInSe2 with a chalcopyrite structure, and a peak at 182 cm(-1) have been observed. The A(1) mode peak is dominant for Cu-rich films and stoichiometric films deposited at high substrate temperature. On the other hand, the 182 cm(-1) peak is dominant for In-rich films and stoichiometric films deposited at low substrate temperature. By comparing the Raman results with the X-ray diffraction measurements, the peak at 182 cm(-1) is found to be characteristic of CuInSe2 with a sphalerite structure.

引用

页码：L1394 / L1396

页数：3

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