Synthesis of ZrO2/Y2O3 by combined arc and magnetron sputtering technique

被引：13

作者：

Cyviene, J

Dudonis, J

Laurikaitis, M

Rakauskas, A

Milcius, D

机构：

[1] Kaunas Univ Technol, Dept Phys, LT-3031 Launas, Lithuania

[2] Lithuania Energy Inst, LT-3035 Kaunas, Lithuania

来源：

SURFACE & COATINGS TECHNOLOGY | 2004年 / 180卷

关键词：

yttria-stabilized zirconia; arc-magnetron reactive deposition;

D O I：

10.1016/j.surfcoat.2003.10.036

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 [材料科学与工程]; 080502 [材料学];

摘要：

Preparation of yttria-stabilized zirconia (YSZ) films by combined reactive arc evaporation and magnetron sputtering was investigated in this work. At first, the dependencies of the film deposition rate on oxygen partial pressure, arc discharge current and magnetron discharge power were measured. After complete analysis of the process of arc-magnetron deposition, the YSZ thin films were deposited on silicon, on the alloy-600 and on the ZrO2 ceramic substrates at a substrate temperature of 400 degreesC. The structure and refractive index of films were investigated by X-ray diffraction and ellipsometry, respectively. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：53 / 58

页数：6

共 8 条

[1]

Influence of substrate temperature and target composition on the properties of yttria-stabilized zirconia thin films grown by rf reactive magnetron sputtering [J].