Optical switch based on vanadium dioxide thin films

被引：89

作者：

Chen, SH ^{[1
]}

Ma, H

Yi, XJ

Wang, HC

Tao, X

Chen, MX

Li, XW

Ke, CJ

机构：

[1] Huazhong Univ Sci & Technol, Dept Optoelect Engn, Wuhan 430074, Peoples R China

[2] Huazhong Univ Sci & Technol, State Key Lab Laser Technol, Wuhan 430074, Peoples R China

[3] Huazhong Univ Sci & Technol, State Key Lab Imaging Recognizat & Intelligence C, Wuhan 430074, Peoples R China

来源：

INFRARED PHYSICS & TECHNOLOGY | 2004年 / 45卷 / 04期

关键词：

optical switches; vanadium dioxide thin films; reactive ion sputtering; extinction ratio;

D O I：

10.1016/j.infrared.2003.11.005

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this letter, novel optical switches based on VO2 thin film on substrates of silicon (10 0) has been fabricated. The vanadium dioxide thin films were deposited by reactive ion beam sputtering followed by a post-annealing. Testing shows the insertion loss of the optical switches is 1-2 dB, and the extinction ratio up to 26 dB. The speed of the switches is as fast as 3 ms. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：239 / 242

页数：4

共 11 条

[1] Linear uncooled microbolometer array based on VOx thin films [J].

Chen, CH ;

Yi, XJ ;

Zhang, J ;

Zhao, XR .

INFRARED PHYSICS & TECHNOLOGY, 2001, 42 (02) :87-90

[2] Mid-infrared properties of a VO2 film near the metal-insulator transition [J].

Choi, HS ;

Ahn, JS ;

Jung, JH ;

Noh, TW ;

Kim, DH .

PHYSICAL REVIEW B, 1996, 54 (07) :4621-4628

[3]

Dachuan Y., 1996, J PHYS D, V29, P1051

[4] A hysteresis model for a vanadium dioxide transition-edge microbolometer [J].

de Almeida, LAL ;

Deep, GS ;

Lima, AMN ;

Neff, HF ;

Freire, RCS .

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 2001, 50 (04) :1030-1035

[5] Novel wet process for preparation of vanadium oxide thin film [J].

Deki, S ;

Aoi, Y ;

Miyake, Y ;

Gotoh, A ;

Kajinami, A .

MATERIALS RESEARCH BULLETIN, 1996, 31 (11) :1399-1406

[6]

DUNCAN DD, 1997, Patent No. 5608568

[7] Plasmon excitation in vanadium dioxide films [J].

Felde, B ;

Niessner, W ;

Schalch, D ;

Scharmann, A ;

Werling, M .

THIN SOLID FILMS, 1997, 305 (1-2) :61-65

[8] Comparison between vanadium dioxide coatings on glass produced by sputtering, alkoxide and aqueous sol-gel methods [J].

Hanlon, TJ ;

Walker, RE ;

Coath, JA ;

Richardson, MA .

THIN SOLID FILMS, 2002, 405 (1-2) :234-237

[9] OXIDES WHICH SHOW A METAL-TO-INSULATOR TRANSITION AT THE NEEL TEMPERATURE [J].

MORIN, FJ .

PHYSICAL REVIEW LETTERS, 1959, 3 (01) :34-36

[10] Monolithic fabrication of 2 x 2 crosspoint switches in InGaAs-InAlGaAs multiple quantum wells using quantum-well intermixing [J].

Qiu, BC ;

Liu, XF ;

Ke, ML ;

Lee, HK ;

Bryce, AC ;

Aitchison, JS ;

Marsh, JH ;

Button, CB .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (12) :1292-1294

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