A Flexible Solution-Processed Memristor

被引：170

作者：

Gergel-Hackett, Nadine ^{[1
]}

Hamadani, Behrang ^{[1
]}

Dunlap, Barbara ^{[1
]}

Suehle, John ^{[1
]}

Richter, Curt ^{[1
]}

Hacker, Christina ^{[1
]}

Gundlach, David ^{[1
]}

机构：

[1] NIST, Gaithersburg, MD 20899 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 07期

关键词：

Flexible electronics; flexible memory; memristor; sol gel; titanium dioxide; TITANIUM-OXIDE; MEMORY;

D O I：

10.1109/LED.2009.2021418

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A rewriteable low-power operation nonvolatile physically flexible memristor device is demonstrated. The active component of the device is inexpensively fabricated at room temperature by spinning a TiO2 sol gel on a. commercially available polymer sheet. The device exhibits memory behavior consistent with a memristor, demonstrates an on/off ratio greater than 10000 : 1, is nonvolatile for over 1.2 x 10(6) s, requires less than 10 V, and is still operational after being physically flexed more than 4000 times.

引用

收藏

页码：706 / 708

页数：3

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